{"id":949,"date":"2024-03-29T11:56:02","date_gmt":"2024-03-29T16:56:02","guid":{"rendered":"https:\/\/my.dev.vanderbilt.edu\/caldwellgroup\/?page_id=949"},"modified":"2024-03-29T12:13:57","modified_gmt":"2024-03-29T17:13:57","slug":"2007-2","status":"publish","type":"page","link":"https:\/\/my.dev.vanderbilt.edu\/caldwellgroup\/publications\/2007-2\/","title":{"rendered":"2003 – 2009"},"content":{"rendered":"

2009<\/strong><\/p>\n

Y. Chen, X.-R. Huang, N. Zhang, M. Dudley, J.D. Caldwell, K.X. Liu and R.E. Stahlbush, \u201cSynchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers\u201d, Mat. Sci. Forum, 600-603, 357 (2009).<\/a><\/p>\n

K.X. Liu, X. Zhang, R.E. Stahlbush, M. Skowronski and J.D. Caldwell, \u201cDifferences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers\u201d, Mat. Sci. Forum, 600-603, 345 (2009).<\/a><\/p>\n

L. Mazeina, Y.N. Picard, J.D. Caldwell, E.R. Glaser and S.M. Prokes, \u201cSynthesis and properties of vertically-aligned SnO2 nanowires\u201d, J. Cryst. Growth, 311, 3158 (2009).<\/a><\/p>\n

Y.N. Picard, M.E. Twigg, J.D. Caldwell, C.R. Eddy Jr., M.A. Mastro, R.L. Henry, R.T. Holm, P.G. Neudeck, A.J. Trunek and J.A. Powell, \u201cResolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging\u201d, Scripta Materialia, 61, 773 (2009).<\/a><\/p>\n

P.B. Klein, J.D. Caldwell, A. Shrivastava and T.S. Sudarshan, \u201cVariations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers\u201d, Mat. Sci. Forum, 600-603, 489 (2009).<\/a><\/p>\n

R.L. Myers-Ward, K.K. Lew, B.L. VanMil, R.E. Stahlbush, K. Liu, J.D. Caldwell, P.B. Klein, P. Wu, M. Fatemi, C.R. Eddy Jr. and D.K. Gaskill, \u201cImpact of 4H-SiC substrate defectivity on epilayer injected carrier lifetimes\u201d, Mat. Sci. Forum, 600-603, 481 (2009).<\/a><\/p>\n

J.D. Caldwell, R.E. Stahlbush, O.J. Glembocki, K.D. Hobart, K.X. Liu and M.J. Tadjer, \u201cTemperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes\u201d Mat. Sci. Forum, 600-603, 273 (2009).<\/a><\/p>\n

E.R. Glaser, N.Y. Garces, J.D. Caldwell, W.E. Carlos, M.E. Zvanut, B. Magnusson, D.M. Hansen, G. Chung and M.J. Loboda, \u201cInfrared PL Signatures on n-type Bulk SiC Substrates with Nitrogen Impurity Concentration Between 1016 and 1017 cm-3\u201d, Mat. Sci. Forum, 600-603, 449 (2009).<\/a><\/p>\n

O.J. Glembocki, J.D. Caldwell, J.A. Mittereder, J.P. Calame and S.C. Binari, \u201cMeasurement of local temperatures using u-Raman of SiC and AlGaN-GaN\/SiC power and RF devices\u201d, Mat. Sci. Forum, 600-603, 1111 (2009).<\/a><\/p>\n

V. Veliadis, H. Hearne, J. Caldwell, M. Snook, T. McNutt, P. Potyraj and C. Scozzie, \u201cEffect of bipolar gate-to-drain current on the electrical properties of vertical junction field effect transistors\u201d, Mat. Sci. Forum, 615-617, 719 (2009)<\/a>.<\/p>\n

A. Shrivastava, P.B. Klein, E.R. Glaser, J.D. Caldwell, A.V. Bolotnikov and T.S. Sudarshan, \u201cLong carrier lifetime in 4H-SiC epilayers using Chlorinated precursors\u201d, Mat. Sci. Forum, 615-617, 291 (2009).<\/a><\/p>\n

J.D. Caldwell, R.E. Stahlbush, E.A. Imhoff, K.D. Hobart, M.J. Tadjer, Q. Zhang, M. Das and A. Agarwal, \u201cRecombination-induced stacking fault degradation in 4H-SiC Merged-PiN-Schottky diodes\u201d, J. Appl. Phys., 106, 044504 (2009).<\/a><\/p>\n

2008<\/strong><\/p>\n

M.A. Mastro, J.D. Caldwell, R.T. Holm, R.L. Henry and C. Eddy Jr., \u201cDesign of Gallium Nitride Resonant Cavity Light Emitting Diodes on Si Substrates\u201d, Adv. Mater., 20, 115 (2008).<\/a><\/p>\n

J.D. Caldwell, O.J. Glembocki, R.E. Stahlbush and K.D. Hobart, \u201cInfluence of temperature on Shockley stacking fault expansion and contraction in SiC PiN diodes\u201d, J. Electron. Mat. 37, 699 (2008).<\/a><\/p>\n

Y.N. Picard, M.E. Twigg, J.D. Caldwell, C.R. Eddy Jr., P.G. Neudeck, A..J. Trunek and J.A. Powell, \u201cEpitaxial SiC growth morphology and extended defects investigated by electron backscatter diffraction and electron channeling contrast imaging\u201d, J. Electron. Mat. 37, 691 (2008).<\/a><\/p>\n

Y. Chen, N. Zhang, M. Dudley, J.D. Caldwell, K.X. Liu, R.E. Stahlbush, X.R. Huang, A.T. Macrander and D.R. Black, \u201cInvestigation of electron-hole recombination-activated partial dislocations and their behavior in 4H-SiC epitaxial layers\u201d J. Electron. Mat. 37, 706 (2008).<\/a><\/p>\n

M.A. Mastro, J. Caldwell, M. Twigg, B. Simpkins, O. Glembocki, R.T. Holm, C.R. Eddy Jr., F. Kub, H-Y. Kim, J. Ahn and J. Kim \u201cGroup III-Nitride Radial Heterojunction Nanowire Light Emitters\u201d J. Ceramic Proc. Res. 9(6), 584 (2008).<\/a><\/p>\n

M.C. Fletcher, A. Vivoni, M.M. Moore, J. Lui, J. Caldwell, S.M. Prokes, O. Glembocki, C.M. Hosten, \u201cNIR-FT-SERS of 4\u201d-trimethylsilylethlysulfanyl-4-4\u2019-di-(phenyleneethynylene)benzenethiol on Au nanospheres\u201d, Surf. Sci., 602 (9), 1614 (2008).<\/a><\/p>\n

A. Shrivastava, P. Muzykov, J.D. Caldwell and T.S. Sudarshan, \u201cStudy of Triangular Defects and Inverted Pyramids in 4H-SiC 4deg off cut (0001) Si Face Epilayers\u201d, J. Cryst. Growth, 310, 4443 (2008).<\/a><\/p>\n

M. A. Mastro, C.S. Kim, M. Kim, J. Caldwell, R.T. Holm, I. Vurgaftman, J. Kim, C.R. Eddy Jr. J.R. Meyer, \u201cZinc Sulphide Overlayer Two-Dimensional Photonic Crystal for Enhanced Extraction of Light from a Micro Cavity Light Emitting Diode\u201d, Jap. J. Appl. Phys. 47, 7827 (2008).<\/a><\/p>\n

2007<\/strong><\/p>\n

J.D. Caldwell, K.X. Liu, M. Tadjer, O.J. Glembocki, R.E. Stahlbush, K.D. Hobart and F. Kub, \u201cThermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes\u201d, J. Electron. Mat., 36(4), 318 (2007).<\/a><\/p>\n

K.X. Liu, R.E. Stahlbush, J.D. Caldwell, K.D. Hobart, F.J. Kub and E.R. Glaser, \u201cPhoto- and electroluminescence imaging of carrot defects in 4H-SiC epitaxy\u201d, J. Electron. Mat., 36(4), 297 (2007).<\/a><\/p>\n

M.A. Mastro, J.A. Freitas, R.T. Holm, C.R. Eddy Jr., J. Caldwell, K. Liu, O. Glembocki, R.L. Henry and J. Kim, \u201cRare-earth Chloride Seeded growth of GaN nano- and micro-crystals\u201d, Appl. Surf. Sci., 253, 6157 (2007).<\/a><\/p>\n

A. Rosenberg, K. Bussmann, Mijin Kim, Michael W. Carter, M.A. Mastro, R.T. Holm, R.L. Henry, J.D. Caldwell and C.R. Eddy, Jr., \u201cFabrication of GaN photonic crystal membranes and resonant nanocavities on Si(111)\u201d, J. Vac. Sci. Technol. B, 25, 721 (2007).<\/a><\/p>\n

J.D. Caldwell, R.E. Stahlbush, K.D. Hobart, O.J. Glembocki and K.X. Liu, \u201cReversal of Forward Voltage Drift in 4H-SiC PiN Diodes via Low Temperature Annealing\u201d, Appl. Phys. Lett., 90, 143519 (2007).<\/a><\/p>\n

J.D. Caldwell, O.J. Glembocki, D. Hansen, G. Chung, A.V. Bolotnikov and T. Sudarshan, \u201cFree Carrier Distribution in 4H-SiC substrates via Optical Scanner Imaging\u201d, J. Appl. Phys., 101, 093506 (2007).<\/a><\/p>\n

K.X. Liu, R.E. Stahlbush, S.I. Maximenko and J.D. Caldwell, \u201cDifferences in emission spectra of Si- and C-core partial dislocations\u201d, Appl. Phys. Lett., 90, 153503 (2007).<\/a><\/p>\n

Y.N. Picard, M.E. Twigg, J.D. Caldwell, C.R. Eddy Jr., P.G. Neudeck, A.J. Trunek, J.A. Powell, \u201cElectron Channeling Contrast Imaging of Atomic Steps and Threading Dislocations in 4H-SiC\u201d, Appl. Phys. Lett., 90, 234101 (2007).<\/a><\/p>\n

M.A. Mastro, J.A. Freitas Jr., O.J. Glembocki, C.R. Eddy Jr, R.T. Holm, R.L. Henry, J.D. Caldwell, R.W. Rendell, F. Kub and J. Kim, \u201cPlasmonically enhanced emission from a group-III nitride nanowire emitter\u201d, Nanotech. 18, 265401 (2007).<\/a><\/p>\n

M.J. Tadjer, K.D. Hobart, J.D. Caldwell, J.E. Butler, K.X. Liu, C.R. Eddy Jr., D.K. Gaskill, K.K. Lew, B.L. Van Mil, M.G. Ancona, F.J. Kub, \u201cNanocrystalline Diamond Films as UV-Semi-Transparent Schottky Contacts to 4H-SiC\u201d, Appl. Phys. Lett., 91, 163508 (2007).<\/a><\/p>\n

Y.N. Picard, M.E. Twigg, J.D. Caldwell, C.R. Eddy, Jr., M.A. Mastro, R.L. Henry, R.T. Holm, P.G. Neudeck, A.J. Trunek and J.A. Powell, \u201cNon-destructive analysis of threading dislocations in GaN by electron channeling contrast imaging\u201d Appl. Phys. Lett., 91, 094106 (2007).<\/a><\/p>\n

J.D. Caldwell, R.E. Stahlbush, K.D. Hobart and O.J. Glembocki, \u201cTemperature-mediated saturation and current-induced recovery of the Vf drift in 4H-SiC pin diodes\u201d, Appl. Phys. Lett, 91, 243509 (2007).<\/a><\/p>\n

2006<\/strong><\/p>\n

O.J. Glembocki, M. Skowronski, S.M. Prokes, D.K. Gaskill and J.D. Caldwell, \u201cObservation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC\u201d, Mat. Sci. Forum, 357-359, 347 (2006).<\/a><\/p>\n

J.D. Caldwell, O.J. Glembocki, D.M. Hansen, G. Chung, K. Hobart and F. Kub, \u201cSiC Substrate Doping Profiles Using Commercial Optical Scanners\u201d, Mat. Sci. Forum, 357-359, 725 (2006).<\/a><\/p>\n

J.D. Caldwell, R.E. Stahlbush, O.J. Glembocki, K.X. Liu and K.D. Hobart, \u201cCharacterization of defects in the drift region of 4H-SiC pin diodes via optical beam induced current\u201d, J. Vac. Sci. & Technol. B, 24, 2178 (2006).<\/a><\/p>\n

J.D. Caldwell, M.A. Mastro, K.D. Hobart, O.J. Glembocki, C.R. Eddy, Jr., R.T. Holm, R.L. Henry, N.D. Bassim, M.E. Twigg, F. Kub, P. Neudeck, A.J. Trunek and J.A. Powell, \u201cImproved Ultra-Violet Emission from Reduced Defect Gallium Nitride Homo-Junctions Grown on Step-Free 4H-SiC Mesas\u201d, Appl. Phys. Lett., 88, 263509 (2006)<\/a>.<\/p>\n

J.D. Caldwell, R.E. Stahlbush, P.B. Klein, O.J. Glembocki, K.X. Liu, K.D. Hobart and F. Kub, \u201cObservation of a Multi-layer In-Grown Stacking Fault in 4H-SiC PiN diodes\u201d Appl. Phys. Lett., 89, 103519 (2006).<\/a><\/p>\n

E. Olshanetsky, J.D. Caldwell, A. Kovalev, C.R. Bowers, J.A. Simmons and J.L. Reno, \u201cElectron-Nuclear Double Resonance and dynamic nuclear polarization in GaAs in the regime of the quantum Hall effect\u201d Physica B, 373, 182 (2006).<\/a><\/p>\n

J.D. Caldwell, \u201cInvestigations of Electron-Nuclear Spin Interactions in Two-Dimensional Electron Systems via Magnetoresistively Detected Magnetic Resonance\u201d, dissertation defended Nov (2004), University of Florida; published online (2006).<\/a><\/p>\n

C.R. Bowers, J.D. Caldwell, G.M. Gusev, A.E. Kovalev, E. Olshanetsky, J.L. Reno, J.A. Simmons and S.A. Vitkalov, \u201cDynamic nuclear polarization and nuclear magnetic resonance in the vicinity of edge states of a 2DES in GaAs quantum wells\u201d, Solid-State NMR, special issue honoring Dr. Alex Pines, 29, 52 (2006).<\/a><\/p>\n

2005<\/strong><\/p>\n

E. Prati, M. Fanciulli, A. Kovalev, J.D. Caldwell, C. Bowers, F. Capotondi, G. Biasiol, and L. Sorba, \u201cMagnetoresistively Detected Electron Spin Resonance in Low-Density Two-Dimensional Electron Gas in GaAs-AlGaAs Single Quantum Wells\u201d, IEEE Trans. Nanotech., 4(1), 100 (2005).<\/a><\/p>\n

J.D. Caldwell, C.R. Bowers and G.M. Gusev, \u201cElectron Spin Resonance in a wide parabolic quantum well\u201d, Phys. Rev. B, 72, 115339 (2005) – Cross-listed with J. Nanoscale Sci. & Tech., 12, 15 (2005).<\/a><\/p>\n

2003<\/strong><\/p>\n

E. Olshanetsky, M. Pilla, J.D. Caldwell, C.R. Bowers, J.A. Simmons, and J.L. Reno, \u201cTemperature Dependence of Electrically Detected ESR at Filling Factor \uf06e=1 in a 2DEG\u201d, Physica E, 17, 320 (2003).<\/a><\/p>\n

E. Olshanetsky, J.D. Caldwell, M. Pilla, S.-C. Liu, C.R. Bowers, J.A. Simmons and J.L. Reno, \u201cTemperature Dependence and Mechanism of Electrically Detected ESR at the nu=1 Filling Factor of a Two Dimensional Electron System\u201d, Phys. Rev. B, 67, 165325 (2003).<\/a><\/p>\n

 <\/p>\n","protected":false},"excerpt":{"rendered":"

2009 Y. Chen, X.-R. Huang, N. Zhang, M. Dudley, J.D. Caldwell, K.X. Liu and R.E. Stahlbush, \u201cSynchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers\u201d, Mat. Sci. Forum, 600-603, 357 (2009). K.X. Liu, X. Zhang, R.E. Stahlbush, M. Skowronski and J.D. Caldwell, \u201cDifferences in Emission Spectra of Dislocations in…<\/p>\n","protected":false},"author":10000,"featured_media":0,"parent":6,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"tags":[],"class_list":["post-949","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/my.dev.vanderbilt.edu\/caldwellgroup\/wp-json\/wp\/v2\/pages\/949","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/my.dev.vanderbilt.edu\/caldwellgroup\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/my.dev.vanderbilt.edu\/caldwellgroup\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/my.dev.vanderbilt.edu\/caldwellgroup\/wp-json\/wp\/v2\/users\/10000"}],"replies":[{"embeddable":true,"href":"https:\/\/my.dev.vanderbilt.edu\/caldwellgroup\/wp-json\/wp\/v2\/comments?post=949"}],"version-history":[{"count":9,"href":"https:\/\/my.dev.vanderbilt.edu\/caldwellgroup\/wp-json\/wp\/v2\/pages\/949\/revisions"}],"predecessor-version":[{"id":969,"href":"https:\/\/my.dev.vanderbilt.edu\/caldwellgroup\/wp-json\/wp\/v2\/pages\/949\/revisions\/969"}],"up":[{"embeddable":true,"href":"https:\/\/my.dev.vanderbilt.edu\/caldwellgroup\/wp-json\/wp\/v2\/pages\/6"}],"wp:attachment":[{"href":"https:\/\/my.dev.vanderbilt.edu\/caldwellgroup\/wp-json\/wp\/v2\/media?parent=949"}],"wp:term":[{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/my.dev.vanderbilt.edu\/caldwellgroup\/wp-json\/wp\/v2\/tags?post=949"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}